A Super Thin Film Transistor in Advanced Poly Si Films

摘要: A super thin film transistor (SFT), the active layer poly Si of which is 150–200 thick, advanced by Si+ implantation and solid phase growth. Poly films were amorphized implantation, then regrown annealing at 600°C in N2 atmosphere for 15 hrs. The maximum grain size increases to 1 µm electrical properties are advanced. SFT's fabricated using this technique, Si- dose acceleration energy dependence field effect mobility µFE evaluated. more than 100 cm2/Vs obtained 40 keV above 2×1015/cm2 800 thick before oxidation.