Design and simulation of antireflection coating for application to silicon solar cells

摘要: Abstract Phosphorous silicate glass (PSG) was formed at the temperature range 800–900°C during diffusion of phosphorous (P) into Si wafers from liquid POCl3 source in ambient atmosphere N2 and O2. The thickness refractive indices were measured by an ellipsometer. index increased with formation upto 875°C then became constant which point PSG is saturated P. From growth rate data different temperatures, linear parabolic activation energies determined as 0.79 1.43 eV for constants, respectively. Therefore, higher than thermal SiO2. films found to have 1.85, 1.78, 1.74 1.71 forming 800°C, 825°C, 850°C 875°C, Reflectivity varied 2.5% 7.5% wavelength 450–700 nm. SIMS depth profiling suggests that there has been a pile up P on side Si/SiO2 interface.