Synthesis and characterization of P-doped amorphous and nanocrystalline Si
作者： Jialing Wang , Shreyashi Ganguly , Sabyasachi Sen , Nigel D. Browning , Susan M. Kauzlarich
DOI: 10.1016/J.POLY.2012.10.011
关键词:
摘要: Abstract Intentional impurity doping lies at the heart of silicon technology. The dopants provide electrons or holes as necessary carriers electron current and can significantly modify electric, optical magnetic properties semiconductors. P-doped amorphous Si ( a -Si) was prepared by solid state solution metathesis reaction Zintl phase precursor, NaSi 0.99 P 0.01 , with an excess NH 4 X (X = Br, I). After salt byproduct removed from reaction, -Si material annealed 600 °C under vacuum for 2 h, resulting in nanocrystalline nc embedded matrix. product also shows combination -Si; however, it fully converted to after annealing argon 650 °C 30 min. Powder X-ray diffraction (XRD) high resolution transmission microscopy (HRTEM) show nature before nanocrystallinity annealing. Fourier Transform Infrared (FTIR) spectroscopy that surface is partially capped H O solvent. Electron microprobe wavelength dispersive (WDS) well energy (EDS) confirm presence material. 29 31 magic-angle-spinning nuclear resonance (MAS NMR) data evidence into structure concentration approximately 0.07 at.%.
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