作者: Fujio Yagihashi , Hideo Nakagawa , Yoshitaka Hamada , Masaru Sasago
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摘要: Provided is a composition formed by hydrolysis and condensation of the alkoxysilane, comprising reduced amount metallic halogen impurities being applicable as electronic material. Also provided an insulating film having low dielectric constant produced applying sintering it. More specifically, method for manufacturing forming film, step alkoxysilane or partial product in organic solvent presence trialkylmethylammonium hydroxide catalyst, wherein selected from groups consisting compounds represented formulae (1) to (4) below, formula (5) below. are obtained method, impurities, on substrate