作者: Songqing Zhao , Yueliang Zhou , Kun Zhao , Zhen Liu , Peng Han
DOI: 10.1016/J.PHYSB.2005.11.116
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摘要: Abstract Silver nanocluster doped ZnO thin films were fabricated on fused quartz substrates at different temperatures by pulsed laser deposition (PLD) using a silver-ZnO mosaic target. X-ray diffraction (XRD) measurements showed that and silver nanoclusters crystallized with preferred c-axis orientation. Scanning electron microscopic (SEM) images of the sample 450 °C photoelectron spectroscopy (XPS) radius clusters to be about 3–16 nm. Under 266 nm excitation, photoluminescence (PL) spectra exhibited peak 414–420 nm for deposited temperatures. Through investigation energy level defects in films, levels zinc vacancy ( V zn , E = 3 . 03 l eV ) interstitial atom (Zni, Zn i 2.95 found consistent wavelengths 414 420 nm. We suggest this violet emission originates from an electronic transition between interstitial-zinc valence band, or bottom conduction band level.