Ultrahigh Sensitivity DNA Detection Using Nanorods Incorporated ISFETs
作者： M. Hajmirzaheydarali , M. Akbari , A. Shahsafi , S. Soleimani-Amiri , M. Sadeghipari
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摘要: Nanotextured gate ion-sensitive field-effect transistors have been realized for high-sensitivity DNA detection. The formation of doped poly-Si rods decorated with ultrafine features is believed to be responsible higher sensitivities such devices. Owing their high sensitivities, devices can detect charge variations during various functionalization, immobilization, and hybridization steps. An analytical model has proposed correlate the sensitivity a structural parameter, ${\beta }$ , varying between zero one. For small values obtained.
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