Method of fabricating multi-layered structure having single crystalline semiconductor film formed on insulator
作者： Katsuyoshi Washio , Takahiro Onai , Masatada Horiuchi
DOI:
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摘要: Disclosed is an multi-layered SOI substrate, which includes a supporting and first insulator, semiconductor film, second insulator single crystalline film (SOI film) are layered on the main surface of substrate The formed by direct bonding technique, bipolar transistor MOS using layer). extremely shallow junction can be without epitaxial growth, thereby significantly increasing operation speed device at low cost.
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