The effects of SiO2 barrier between active layer and substrate on the performance and reliability of polycrystalline silicon thin film transistors
作者： Y.Z Wang , O.O Awadelkarim
DOI: 10.1016/S0026-2714(98)00164-4
关键词:
摘要: We report on the performance and hot carrier stress (HCS) reliability of n-channel p-channel poly-Si thin film transisters (TFT)s fabricated SiO2-coated 1737 glass or bare substrates. Low-pressure chemical vapor deposited (LPCVD) atmospheric pressure (APCVD) SiO2 with different thicknesses are used as impurity diffusion barrier layers. have found that HCS n-TFTs superior to those glass. P-TFTs glass, other hand, observed perform better than p-TFTs substrates, however seen undergo larger improvements in their OFF current, IOFF, following compared also explore impact coating thickness TFTs. The TFTs substrates is depend thickness. This was explained terms a phenomenological model which involves grain boundary traps. presence former type traps controlled by absence coating, whereas proposed be sensitive compressive tensile stresses layer are, turn, dependent layer's
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