Adsorption and decomposition of diethylsilane and diethyldichlorosilane on Si(100)(2 × 1) and Si(111)(1 × 1)

作者: J. Schmidt , Ch. Stuhlmann , H. Ibach

DOI: 10.1016/0039-6028(94)91092-8

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摘要: Electron energy loss spectroscopy (EELS) has been used to study the adsorption and decomposition of diethylsilane (C2H5)2SiH2 (DES) diethyldichlorosilane (C2H5)2SiCl2 (DECS) on Si(100×2 X 1) Si(111)(1×1). At 40 K DES DECS adsorb molecularly. decomposes into ethyl groups SiH after room temperature adsorption. 600 undergo β-hydride elimination producing adsorbed ethylene hydrogen. Upon further heating surface CH-groups. Finally, at 800 CH-groups are dehydrogenated, H desorbs Si-C species formed. The stable up 900 K, which point they convert a preliminary stage silicon carbide. Similar reactions found Si(100). In contrast results for Si(100) annealing exposed Si(111) leads clean free from any contaminations.

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