Reactions of atomic deuterium with C2D5Br on Si(100)
作者： G.M Sampson , J.M White , J.G Ekerdt
DOI: 10.1016/S0039-6028(98)00359-8
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摘要: Abstract The reaction of gas-phase deuterium atoms with C2D5Br (EtBr) adsorbed on Si(100) is studied using temperature programmed desorption and Auger electron spectroscopy. EtBr adsorption bare Si(100), at 300 K, without D atom preexposure, dissociatively chemisorbs into ethyl groups bromine. Ethyl undergo β-deuteride elimination to desorb ethylene 600 K. Bromine desorbed as the etch product SiBr 950 K. When are dosed after EtBr, TPD peaks shift higher temperature. A small (30 50 K) attributed removal bromine low fluences (
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