ZnO/(ZnMg)O single quantum wells with high Mg content graded barriers
作者： Bernhard Laumer , Fabian Schuster , Thomas A. Wassner , Martin Stutzmann , Marcus Rohnke
DOI: 10.1063/1.4723642
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摘要: ZnO/Zn1−xMgxO single quantum wells (SQWs) were grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates. Compositional grading allows the application of optimized growth conditions for fabrication Zn1−xMgxO barriers with high crystalline quality and a maximum Mg content x = 0.23. High resolution x-ray diffraction reveals partial relaxation graded barriers. Due to exciton localization, SQW emission is found consist contributions from donor-bound free excitons. While narrow SQWs well width dW≤2.5nm, observed increase binding energy caused confinement, drop photoluminescence below ZnO bulk value wide attributed quantum-confined Stark effect. For x = 0.23, built-in electric field 630 kV/cm extracted, giving rise decrease rapid thermal quenching characterized an activation (...
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