Threshold amplifier for IC fabrication using CMOS technology

摘要: The present invention relates to a threshold amplifier suited integrated circuit fabrication of process employing CMOS technology. is designed sense current producing first or second logic level as function threshold. comprises p-channel device and n-channel serially connected across the bias supply. gate source voltages two devices are respectively controlled by diode similarly supply with device, latter being returned ground via carrying resistance also in series path. output which taken at drain inter-connection between path depends on relative conductivity turn affected induced voltage drop may be geometry ratio devices, setting