Valence-band characterization of AgGaSe2thin films

摘要: AgGaSe2 thin films were prepared at post-deposition annealing temperatures from 100 to 350 °C for 15 min onto glass substrates by the stacked elemental layer deposition technique in vacuum. The structural properties of ascertained x-ray diffraction method. atomic compositions and optical measured energy dispersive analysis UV–VIS–NIR spectrophotometry, respectively. lattice parameters are independent grain size varies directly with temperatures. demonstrate compositional uniformity. nature extent band gap on various have been analysed. Two types electronic transitions observed. Direct allowed direct forbidden vary 1.67 eV 1.75 eV 2.05 eV 2.08 eV, splitting valence is proposed be due spin–orbit interaction. 0.33 eV 300 °C, which nearest single crystal value. p–d hybridizations while inversely temperature. admixture Ag 4d levels otherwise p-like bands calculated 13%.