作者: J. E. Lowther
DOI: 10.1103/PHYSREVB.67.115206
关键词:
摘要: Nitrogen is the most important defect in diamond forming a series of aggregates that are used to characterize different types diamond. Aggregation substitutional N and O investigated using detailed ab initio plane-wave calculational procedures. Different charge states N-N pair (the A center) considered as well an adjacent O-N pair. Both suggested be stable defects, charged negative form [N-O] can lead shallow levels. There substantial local lattice distortion due strong repulsion between ions this leads shortened C-N hoods, on which there related buildup relative normal C-C bond, responsible for Possibly such could even efficient electron emission very highly nitrogen doped