Nonvolatile organic transistor-memory devices using various thicknesses of silver nanoparticle layers
作者： SM Wang , Chi Wah Leung , PKL Chan , None
DOI: 10.1063/1.3462949
关键词:
摘要: We demonstrate the modification of memory effect in organic devices by adjusting thickness silver nanoparticles (NPs) layer embedded into semiconductor. The window widens with increasing Ag NPs thickness, a maximum 90 V is achieved for 5 nm and on/off current ratio decreases from 105 to 10 when increases 1 nm. also compare charge retention properties different thicknesses. Our investigation presents direct approach optimize performance structure.
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