Si/Si Interface Bonded at Room Temperature by Ar Beam Surface Activation

摘要: Si wafers are successfully bonded at room temperature by Ar beam surface etching in ultra high vacuum. The bonding interface was investigated transmission electron microscope (TEM). Residual strain originated from roughness is observed the region. residual relaxed low annealing. An amorphous-like intermediate layer exists interface. different oxide which often Si/Si prepared conventional wafer bonding. It supposed that damages atom impact formed this layer, because thickness of changes according to kinetic energy beam. This quite instable. Low annealing or irradiation during TEM observation cause recrystallization layer. Therefore, stress and only specimens not subjected any heat treatments.