作者: Walter J. Salcedo , Mauro S. Braga , Ruth F.V.V. Jaimes
DOI: 10.1016/J.JLUMIN.2018.03.027
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摘要: Abstract In the present work, it is reported high photoluminescence (PL) enhancement of porous silicon (PS) films doped with Cr+3 ions by electrochemical process. The experimental results showed that PL emission on these samples have been achieved 6 orders magnitude relative to intensity from normal PS sample. peak position takes place below 710 nm suggesting Cr3+ in structure under strong crystal-field action. Raman spectra suggest incorporated at surface forming oxide complex.