Effect of annealing time and NH3 flow on GaN films deposited on amorphous SiO2 by MOCVD
作者： Tianbao Li , Chenyang Liu , Zhe Zhang , Bin Yu , Hailiang Dong
DOI: 10.1016/J.SPMI.2018.03.053
关键词:
摘要: … X-ray diffraction patterns indicate that the decomposition rate of the nucleation layer … and amorphous domains decompose rapidly, thereby improving the crystallinity of the GaN films. …
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