Decoding system capable of charging protection for flash memory devices

摘要: The present invention relates to a flash memory array. array includes at least two word lines of gate electrode material. At one the is connected through first metal level discharge circuit, while other line(s) may connect circuit and second level. further shorting path between high resistance layer undoped value material such that can be used read, write, or erase without effecting each other, but during formation level, as charges will build up on line which requires its junction it short an adjacent has connection