Semiconductor device manufacturing method
作者： Toshinori Imai , Junji Noguchi , Tsuyoshi Fujiwara
DOI:
关键词:
摘要: Disclosed is a method of manufacturing semiconductor device which has reliable buried interconnects (wirings) and MIM capacitor. An interconnect capacitor bottom electrode are formed inside hole made in six insulation films. Then barrier film on the uppermost (of above films) including top face electrode. After two films film, that hole. The also functions as capacity for Then, after three other upper electrode, films, another
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