High resolution photoluminescence spectroscopy of donors in undoped and In-doped ZnO grown by metalorganic vapor phase epitaxy
作者： S. P. Watkins , Z. W. Deng , D. C. Li , H. Huang
DOI: 10.1063/1.3652854
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摘要: We report the observation of photoluminescence (PL) transitions in ZnO epilayers grown by metalorganic vapor phase epitaxy (MOVPE) on C-sapphire substrates with linewidths as low 0.2 meV at 4.2 K. A dominant donor bound exciton (D0X) peak 3361.0 meV is observed all undoped samples together corresponding ionized (D+X) 3372.9 meV. The addition In dopant using trimethylindium results appearance I9 transition 3357.8 meV, which has been previously attributed to D0X transitions. By intentionally doping we can calibrate PL energy spectra, and thereby identify material due Ga donors. identifications are also confirmed two electron satellites. High temperature annealing under O2 a strong reduction transitions, third line attribute Al out-diffusing from sapphire...
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