Large scale integration of flexible non-volatile, re-addressable memories using P(VDF-TrFE) and amorphous oxide transistors

摘要: Ferroelectric polymers and amorphous metal oxide semiconductors have emerged as important materials for re-programmable non-volatile memories high-performance, flexible thin-film transistors, respectively. However, realizing sophisticated transistor memory arrays has proven to be a challenge, demonstrating reliable writing reading from such large scale thus far not been demonstrated. Here, we report an integration of ferroelectric, P(VDF-TrFE), with circuitry that can address each individual element in array. n-type indium gallium zinc is used the active channel material both logic transistors. The maximum process temperature 200 °C, allowing plastic films substrate material. technology was scaled up 150 mm wafer size, offers good reproducibility, high device yield low variation. This forms basis successful demonstration arrays, read write circuitry, these. cop. 2015 IOP Publishing Ltd.