Enhanced organic ferroelectric field effect transistor characteristics with strained poly(vinylidene fluoride-trifluoroethylene) dielectric

摘要: Abstract Poly(vinylidene fluoride-trifluoroethylene) (70–30 mol%) was used as the functional dielectric layer in organic ferroelectric field effect transistors (FeFET) for non-volatile memory applications. Thin P(VDF-TrFE) film samples spin-coated on metallized plastic substrates were stretch-annealed to attain a topographically flat-grain structure and greatly reduce surface roughness current leakage of semi-crystalline copolymer film, while enhancing preferred β-phase films. Resultant properties ( P R = |10| μC/cm 2 , E C = |50| MV/m) simultaneously stretched (50–70% strain) heated below Curie transition (70  o C) comparable those resulting from high temperature annealing (>140  C). The observed enhancements by heating stretching studied vibration spectroscopy showed mutual complementary effects both processes. Organic FeFET fabricated thermal evaporating pentacene smooth films substantial improvement semiconductor grain growth enhanced electrical characteristics with promising functionality.