Transparent photostable ZnO nonvolatile memory transistor with ferroelectric polymer and sputter-deposited oxide gate
作者： C. H. Park , Seongil Im , Jungheum Yun , Gun Hwan Lee , Byoung H. Lee
DOI: 10.1063/1.3269576
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摘要: We report on the fabrication of transparent top-gate ZnO nonvolatile memory thin-film transistors (NVM-TFTs) with 200 nm thick poly(vinylidene fluoride/trifluoroethylene) ferroelectric layer; semitransparent 10 thin AgOx and 130 indium-zinc oxide (IZO) were deposited polymer as gate electrode by rf sputtering. Our NVM-TFT operates under low voltage write-erase (WR-ER) pulse ±20 V, but shows some degradation in retention property. In contrast, our IZO-gated device displays very good properties requires anomalously higher ±70 V for WR ER states. Both devices stably operated visible illuminations.
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