Fully patterned and low temperature transparent ZnO-based inverters
作者： G. Gutierrez-Heredia , I. Mejia , M.E. Rivas-Aguilar , N. Hernandez-Como , V.H. Martinez-Landeros
DOI: 10.1016/J.TSF.2013.07.069
关键词:
摘要: Abstract The fabrication and characterization of transparent logic inverters based on zinc oxide (ZnO) thin film transistors (TFTs) is reported. are fabricated using standard photolithographic techniques glass substrates, the entire process temperature maintained 2 /V-s, threshold voltages 6 V, sub-threshold slopes 630 mV/decade I ON / OFF ratios 5 × 10 6 . Films characterized by UV-Vis showed optical transmission > 80% in visible spectrum. analyzed with AC input signals at frequencies 100 500 Hz. response shows an average rise fall time transitions 0.65 0.44 ms, respectively. Measured delay order 0.21 ms.
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