Method for chemical planarization (CMP) of a semiconductor wafer to provide a planar surface free of microscratches
作者： Malcolm Grief , Laurence D. Schultz , Trung T. Doan
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摘要: A method of chemically-mechanically planarizing (CMP) a dielectric layer formed on semiconductor wafer includes the with polishing pad hard low compressibility material, and then soft compressible material to remove micro-scratches during planarization step. During step, does not deform into surface is planarized along single contact plane. loading effect in which compresses produces an irregular thus eliminated.
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