Electronic and magnetic properties of monolayer SiC sheet doped with 3d-transition metals
作者： Masoud Bezi Javan , None
DOI: 10.1016/J.JMMM.2015.10.103
关键词:
摘要: Abstract We theoretically studied the electronic and magnetic properties of monolayer SiC sheet doped by 3d transition-metal (TM) atoms. The structural properties, induced strain, were for cases that a carbon or silicon replaced with TM found mount strain to lattice structure substituting atoms is different Si (TMSi) C (TMC) sites as TMSi structures have lower value strain. Also can be substituted in binding energy values TMC higher energies. Dependent sheets show nonmagnetic properties. some such MnSi, CuSi CoC configurations significant total moment about 3 μ B .
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