作者: Der-Song Lin , Xuefeng Zhuang , Robert Wodnicki , Charles. G. Woychik , Oralkan Omer
DOI: 10.1109/MEMSYS.2010.5442455
关键词:
摘要: The successful packaging and electronics integration of large 2D array devices with small pitch-sizes, such as fully populated ultrasonic transducer arrays, require a flexible, simple, reliable approach. One example for is based on through silicon vias (TSVs) under-bump metallization (UBM) stack solder bumping. In this paper, we demonstrate an approach by successfully integrating array. Our previously reported TSV technology (trench-frame technology), trench-isolated interconnects supporting frame. We combined the trench-frame simple UBM preparation technique - electro plating or chemical techniques passivation layers pad definition are not required. results show high shear strength (26.5g) UBM, which essential flip-chip bonding. yield interconnections 100% excellent solder-ball-height uniformity (σ = 0.9 µm). As demonstrated in allows large-scale assembly tiled using interposer. A design guideline finer element-pitch was developed suggesting that fusion bonding length pillars main parameters.