作者: M. Novotny , J. Bulir , A. Bensalah-Ledoux , S. Guy , P. Fitl
DOI: 10.1007/S00339-014-8474-4
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摘要: ZnPc thin films were prepared by pulsed laser deposition (KrF laser, λ = 248 nm, τ = 5 ns, f = 50 Hz) on suprasil substrates in vacuum. Optical properties UV–Vis spectral region analyzed as functions of fluence from 40 to 100 mJ/cm2 spectrophotometric and ellipsometry measurements. The data treated using a three-layer model (substrate, film, roughness). best results fitting obtained when Q band was characterized two Lorentz oscillators, while Gaussian oscillators used for B C fitting. We derived the gap Tauc plot considering direct semiconductor. values found decreasing 3.13 3.09 eV with increasing fluence, which might be related formation trapping sites at higher fluence.