作者: E Ina , N Matsumoto , E Shikada , F Kannari
DOI: 10.1016/S0169-4332(97)00708-3
关键词: Laser ablation 、 Poling 、 Electric field 、 Crystallinity 、 Substrate (electronics) 、 Materials science 、 Thin film 、 Analytical chemistry 、 Laser 、 Deposition (law) 、 Optoelectronics
摘要: Abstract The poor crystallinity of copper-phthalocyanine (CuPc) thin films fabricated via KrF laser ablation is significantly improved by three different assisting methods applied during deposition: (1) elevating substrate temperature only up to 50°C; (2) irradiating with HeNe ∼200 μW/cm2; (3) applying DC electric field. Highest obtained when the film deposited under field ∼50 V/cm in direction thickness. This in-process poling also works for 4-dialkylamino-4′-nitrostilbensen (DANS) film.