Power Sandwich industrial drive with SiC JFETs
作者： I. Josifovic , J. Popovic-Gerber , J. A. Ferreira
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摘要: This work presents an implementation of a compact and highly efficient 2.2kW industrial drive using the Power Sandwich layered construction, x-dimension (x-dim) passive components wide-band gap SiC semiconductors (JFETs diodes). X-dim SMT that have uniform height enhanced thermal properties are stacked between planar substrates to achieve high power density better performance drive. The use wide band results in efficiency increase around 3% compared Si-based counterpart. It is found parasitic coupling heat sinks significantly deteriorates JFET's switching performance. management concept for drive, which two separate minimises capacitive effect thus exploiting full potential fast JFETs proposed. 3-D construction lower loss enabled by allows reduced effort consequently increased density. SiC-based has 3.8kW/l, system 98.4% operates at temperatures below 50˚C without typical heavy and/or complex sinks.
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