AC NBTI studied in the 1 Hz -- 2 GHz range on dedicated on-chip CMOS circuits

摘要: We describe on-chip circuits specially designed and fabricated for the purpose of measuring effect AC NBTI on an individual, well-defined device in wide frequency range a single wafer. The are to allow measurements multiple modes, specifically, DC (both interrupted on-the-fly), pFET CMOS inverter, as well charge-pumping characterization stressed pFET. results indicate that is independent 1 Hz -- 2 GHz range. voltage stress time acceleration observed be identical both stress.