作者: Yinghuan Kuang , Marcel Di Vece , Jatindra K Rath , Lourens van Dijk , Ruud E I Schropp
DOI: 10.1088/0034-4885/76/10/106502
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摘要: In solar cell technology, the current trend is to thin down active absorber layer. The main advantage of a thinner primarily reduced consumption material and energy during production. For film silicon (Si) thinning layer particular interest since both device throughput vacuum deposition systems stability devices are significantly enhanced. These features lead lower cost per installed watt peak for cells, provided that (stabilized) efficiency same as thicker devices. However, merely inevitably leads light absorption. Therefore, advanced trapping schemes crucial increase path length. use elongated nanostructures promising method trapping. enhanced optical performance originates from orthogonalization light's travel with respect direction carrier collection due radial junction, an improved anti-reflection effect thanks three-dimensional geometric configuration multiple scattering between individual nanostructures. advantages potentially allow high at quantity even quality, semiconductor material. this article, several types potential improve reviewed. First, we briefly introduce conventional cells emphasis on following most commonly used fabrication techniques creating aspect ratio. Subsequently, representative applications nanostructures, such Si nanowires in realistic photovoltaic (PV) devices, Finally, scientific challenges outlook nanostructured PV presented.