Study of vertical Si/SiO2 interface using laser-assisted atom probe tomography and transmission electron microscopy.
作者： J.H. Lee , B.H. Lee , Y.T. Kim , J.J. Kim , S.Y. Lee
DOI: 10.1016/J.MICRON.2013.11.003
关键词:
摘要: Abstract Laser-assisted atom probe tomography has opened the way to three-dimensional visualization of nanostructures. However, many questions related laser–matter interaction remain unresolved. We demonstrate that interface reaction can be activated by laser-assisted field evaporation and affects quantification interfacial composition. At a vertical between Si SiO2, SiO2 molecule tends combine with evaporate as SiO molecule, reducing field. The features depend on direction laser illumination inner structure tip. A high concentration is observed at when column positioned center tip, whereas no significant detected layer center. difference in compositions two samples was due preferential layer. This explained using transmission electron microscopy observations before after experiments.
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