Lateral Non-Uniformity Charges Influence on Interface Trap Density (Dit) by Terman Method in the nMOS Fabrication
作者： Shen Li Chen , Yet Fan Chang
DOI: 10.4028/WWW.SCIENTIFIC.NET/AMR.690-693.1846
关键词:
摘要: Generally speaking, the oxide interface quality can be determined by trap density (Dit) distribution. In this paper, Dit quantity obtained from Terman method, which it is assumed that equal to zero at beginning for simulating effect in ultra-thin oxide. However, lateral non-uniformity charges have existed layer, maybe an equivalent not also producing value. And, such faked will resulted error high frequency measurement. Fortunately, solved differentiating technique obtain accuracy quantity.
sci-hub.se 参考文章(6)
S Berberich, P Godignon, M.L Locatelli, J Millán, H.L Hartnagel, High frequency CV measurements of SiC MOS capacitors Solid-state Electronics. ,vol. 42, pp. 915- 920 ,(1998) , 10.1016/S0038-1101(98)00122-1
Atsushi Shirane, Mototada Otsuru, Sang_yeop Lee, Shin Yonezawa, Satoru Tanoi, Hiroyuki Ito, Noboru Ishihara, Kazuya Masu, A process-scalable RF transceiver for short range communication in 90 nm Si CMOS 2012 IEEE Radio Frequency Integrated Circuits Symposium. pp. 455- 458 ,(2012) , 10.1109/RFIC.2012.6242320
T.S. Lay, M. Hong, J. Kwo, J.P. Mannaerts, W.H. Hung, D.J. Huang, Energy-band parameters at the GaAs– and GaN–Ga2O3(Gd2O3) interfaces Solid-state Electronics. ,vol. 45, pp. 1679- 1682 ,(2001) , 10.1016/S0038-1101(01)00175-7
David A. Deen, James G. Champlain, High frequency capacitance-voltage technique for the extraction of interface trap density of the heterojunction capacitor: Terman’s method revised Applied Physics Letters. ,vol. 99, pp. 053501- ,(2011) , 10.1063/1.3615279
Hao-Peng Lin, Jenn-Gwo Hwu, Analysis of Constitution and Characteristics of Lateral Nonuniformity Effects of MOS Devices Using QM-Based Terman Method IEEE Transactions on Electron Devices. ,vol. 54, pp. 3064- 3070 ,(2007) , 10.1109/TED.2007.907103
Ivan Starkov, A Starkov, S Tyaginov, H Enichlmair, Hajdin Ceric, Tibor Grasser, None, An analytical model for MOSFET local oxide capacitance international semiconductor device research symposium. pp. 1- 2 ,(2011) , 10.1109/ISDRS.2011.6135359