An analytical model for MOSFET local oxide capacitance

摘要: Practically all methods for extraction of the lateral interface state density profile N it (x) from charge-pumping data employ oxide capacitance C ox [1–3] as a crucial parameter. Although Lee et al. [2] claimed that coordinate dependence due to fringing effect should be respected, usually is treated constant parameter device [3]: =e /t , (1), where t thickness at center and e dielectric permittivity. However, electric field non-uniformity special importance after hot-carrier stress because peak located near drain end gate [4] capacitor non-ideality most pronounced.