作者: M. Rahmani , H. Ajlani , A. Moadhen , M.-A. Zaïbi , L. Haji
DOI: 10.1016/J.JALLCOM.2010.07.055
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摘要: Abstract Porous silicon (PS) passivated by iron (PS/Fe) shows an intense, board and stable photoluminescence (PL) band centred at 1.77 eV. The time-resolved (TRPL) of PS PS/Fe, in the range some tenth μs, were investigated room temperature. Contrary to PS, TRPL spectrum PS/Fe exhibits a multi-band profile, attributed presence porous matrix. Hence, passivation provides formation two states located gap. PL decay line shape, is well described stretched exponential. time (τ) has been found lower than that which due reduction non-radiative transitions. Such paths occur when excited carriers escape tunnelling from less nanocrystallites silicon. analyses spectra as times approve Si iron.