Time-resolved photoluminescence study of stabilised iron–porous silicon nanocomposites

作者: M. Rahmani , H. Ajlani , A. Moadhen , M.-A. Zaïbi , L. Haji

DOI: 10.1016/J.JALLCOM.2010.07.055

关键词:

摘要: Abstract Porous silicon (PS) passivated by iron (PS/Fe) shows an intense, board and stable photoluminescence (PL) band centred at 1.77 eV. The time-resolved (TRPL) of PS PS/Fe, in the range some tenth μs, were investigated room temperature. Contrary to PS, TRPL spectrum PS/Fe exhibits a multi-band profile, attributed presence porous matrix. Hence, passivation provides formation two states located gap. PL decay line shape, is well described stretched exponential. time (τ) has been found lower than that which due reduction non-radiative transitions. Such paths occur when excited carriers escape tunnelling from less nanocrystallites silicon. analyses spectra as times approve Si iron.

参考文章(17)
Q.W. Chen, X. Li, Y. Zhang, Improvement mechanism of photoluminescence in iron-passivated porous silicon Chemical Physics Letters. ,vol. 343, pp. 507- 512 ,(2001) , 10.1016/S0009-2614(01)00762-X
J. C. Vial, A. Bsiesy, F. Gaspard, R. Hérino, M. Ligeon, F. Muller, R. Romestain, R. M. Macfarlane, Mechanisms of visible-light emission from electro-oxidized porous silicon. Physical Review B. ,vol. 45, pp. 14171- 14176 ,(1992) , 10.1103/PHYSREVB.45.14171
M D Yang, K W Chen, J L Shen, J C Wang, C Hsu, Time-resolved photoluminescence in anodic aluminum oxide membranes Nanotechnology. ,vol. 18, pp. 405707- ,(2007) , 10.1088/0957-4484/18/40/405707
A. G. Cullis, L. T. Canham, P. D. J. Calcott, The structural and luminescence properties of porous silicon Journal of Applied Physics. ,vol. 82, pp. 909- 965 ,(1997) , 10.1063/1.366536
X. Chen, B. Henderson, K. P. O’Donnell, Luminescence decay in disordered low‐dimensional semiconductors Applied Physics Letters. ,vol. 60, pp. 2672- 2674 ,(1992) , 10.1063/1.106891
A. H. J. Venhuizen, G. W. ’t Hooft, Y. A. R. R. Kessener, G. L. J. A. Rikken, Temperature dependence of the radiative lifetime in porous silicon Applied Physics Letters. ,vol. 61, pp. 2344- 2346 ,(1992) , 10.1063/1.108238
R. Laiho, A. Pavlov, T. Tsuboi, Time-resolved photoluminescence spectroscopy of porous silicon Journal of Luminescence. ,vol. 57, pp. 89- 93 ,(1993) , 10.1016/0022-2313(93)90112-Z
O. Bisi, Stefano Ossicini, L. Pavesi, Porous silicon: a quantum sponge structure for silicon based optoelectronics Surface Science Reports. ,vol. 38, pp. 1- 126 ,(2000) , 10.1016/S0167-5729(99)00012-6
DY Lee, JW Park, JY Leem, JS Kim, SK Kang, JS Son, HB Kang, YH Mun, DK Lee, DH Kim, IH Bae, Strong and stable red photoluminescence from porous silicon prepared by Fe-contaminated silicon Journal of Crystal Growth. ,vol. 260, pp. 394- 399 ,(2004) , 10.1016/J.JCRYSGRO.2003.09.008