Direct recognition of non-radiative recombination centers in semi-insulating LEC InP:Fe using double excitation photoluminescence
作者： S. Doğan , S. Tüzemen
DOI: 10.1016/J.JLUMIN.2007.07.015
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摘要: Abstract In order to observe the effect of intra-band gap excitation on photoluminescence (PL) properties undoped InP and iron doped (InP:Fe), PL measurements were performed in crystals with thickness 360 μm area about 4×3 mm2, grown by liquid encapsulated Czochralski (LEC) technique upon both Ar-ion laser 980 nm light. The intensities for InP:Fe under wavelength light illumination relative no increased 52%, 33%, 12% 1.337, 1.380, 1.416 eV peaks, respectively, at 10 K, whereas there was InP. This is a strong indication that Fe centers play role as non-radiative recombination decrease intensity. experiments spectral range 1320–1440 meV sample temperature 10–160 K. electron hole photoionization cross-sections calculated σ n 0 [ 2 + / 3 → CB ] = 2.34 × 1 - 18 cm p o VB 8.20 17 , respectively.
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