作者: Hitoshi Hokari , Motohiko Yoshida , Takahiro Hiramatsu , Hiromitsu Ishii , Tokiyoshi Matsuda
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摘要: A thin film transistor includes a substrate, and pair of source/drain electrodes (i.e., source electrode drain electrode) formed on the substrate defining gap therebetween. low resistance conductive films are provided such that each coats at least part one electrodes. The define An oxide semiconductor layer is continuously upper surfaces extends along defined between so as to function channel. Side corresponding side coincide with other in channel width direction