Recent development of diamond microtip field emitter cathodes and devices

作者: W. P. Kang , J. L. Davidson , A. Wisitsora-at , D. V. Kerns , S. Kerns

DOI: 10.1116/1.1368667

关键词:

摘要: Recent development of diamond field emitter cathodes and devices fabricated from molding process is presented. Practical modifications involving the sp2 content, surface treatment, boron doping, tip sharpening to further enhance emission are discussed. A new fabrication for achieving ultrasharp tips with a radius curvature less than 5 nm has been achieved shows significant improvement in characteristics. Discussion this enhanced microtips presented accordance analysis behavior. The high site density uniform microtip arrays We also report technique fabricate self-aligned gate diodes, which achieve very characteristics at extremely low applied voltage. latest aims integrate emitters silicon-based MEMS processing technology totally monolithic devi...

参考文章(35)
JH Jung, BK Ju, YH Lee, MH Oh, J Jang, None, Enhancement of electron emission efficiency and stability of molybdenum field emitter array by diamond-like carbon coating international electron devices meeting. pp. 293- 296 ,(1996) , 10.1109/IEDM.1996.553587
M.Jagadesh Kumar, David J Roulston, New buried P+-grid polysilicon emitter bipolar power transistor Solid-state Electronics. ,vol. 38, pp. 1854- 1856 ,(1995) , 10.1016/0038-1101(95)00091-7
T. Hirano, S. Kanemaru, J. Itoh, A MOSFET-structured Si tip for stable emission current international electron devices meeting. pp. 309- 312 ,(1996) , 10.1109/IEDM.1996.553591
I. L. Krainsky, V. M. Asnin, G. T. Mearini, J. A. Dayton, Negative Electron Affinity Effect on the Surface of Chemical Vapor Deposited Diamond Polycrystalline Films Physical Review B. ,vol. 53, ,(1996) , 10.1103/PHYSREVB.53.R7650
JVVAFGJWBJJSDMTBRJT Liu, VV Zhirnov, AF Myers, GJ Wojak, WB Choi, JJ Hren, SD Wolter, MT McClure, BR Stoner, JT Glass, Field emission characteristics of diamond coated silicon field emitters Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 13, pp. 422- 426 ,(1995) , 10.1116/1.587961
J. van der Weide, Z. Zhang, P. K. Baumann, M. G. Wensell, J. Bernholc, R. J. Nemanich, NEGATIVE-ELECTRON-AFFINITY EFFECTS ON THE DIAMOND (100) SURFACE Physical Review B. ,vol. 50, pp. 5803- 5806 ,(1994) , 10.1103/PHYSREVB.50.5803
Takashi Sugino, Electron emission characteristics of polycrystalline diamond films Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 16, pp. 720- 723 ,(1998) , 10.1116/1.589890
WP Kang, JL Davidson, M Howell, B Bhuva, DL Kinser, DV Kerns, Q Li, JF Xu, Micropatterned polycrystalline diamond field emitter vacuum diode arrays Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 14, pp. 2068- 2071 ,(1996) , 10.1116/1.588987
W. P. Kang, Effect of sp[sup 2] content and tip treatment on the field emission of micropatterned pyramidal diamond tips Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 16, pp. 684- 688 ,(1998) , 10.1116/1.589881
VV Zhirnov, EI Givargizov, PS Plekhanov, Field emission from silicon spikes with diamond coatings Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 13, pp. 418- 421 ,(1995) , 10.1116/1.587960