Digital control of SiO(2)-TiO(2) mixed-metal oxides by pulsed PECVD.
作者： Pieter C. Rowlette , Colin A. Wolden
DOI: 10.1021/AM900506Y
关键词:
摘要: Pulsed plasma enhanced chemical vapor deposition (PECVD) was used to deliver digital control of SiO(2), TiO(2), and SiO(2)-TiO(2) composites at room temperature. Alloy formation investigated by maintaining constant delivery TiCl(4) while varying the SiCl(4) flow. Film composition assessed spectroscopic ellipsometry, XPS, FTIR. It is shown that alloy refractive index can be tuned continuously over a broad range using pulsed PECVD. The two precursors were found highly compatible, with growth rate simply reflecting sum contributions from individual precursors. Digital both thickness demonstrated through production antireflection (AR) coatings for crystalline silicon. AR synthesized on basis optimized designs, in each case measured optical performance excellent agreement model predictions. average reflectance across visible spectrum reduced 39% uncoated wafers 2.5% three-layer coating.
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