Effect of wall conditions on the self-limiting deposition of metal oxides by pulsed plasma-enhanced chemical vapor deposition

摘要: Pulsed plasma-enhanced chemical vapor deposition has been engineered to deliver self-limiting growth (i.e., ∼A∕pulse) of metal oxides such as Ta2O5 and Al2O3. In this process the reactor walls are alternately exposed atomic oxygen precursors. The degree adsorption in latter step can dramatically influence both rates film quality. impact precursor on plasma gas-phase composition these systems was quantified using optical emission spectroscopy quadrupole mass spectrometry, respectively. It is shown that time scale for a complete chamber much greater than residence times. Adsorbed compounds significantly alter composition, particularly at initiation each pulse. As consequence, careful attention must be paid design operation control maintain