作者: Fujisaki Masato
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摘要: PURPOSE:To reduce the electrode lead-out resistance by increase of a light receiving area method wherein diffused layers on substrate side surface and back are formed thermomigration utilizing phenomenon that aluminum fuses in band having temperature inclination semiconductor. CONSTITUTION:An foil 7 is arranged at end an Si P type layer 2 N 1. Besides, whole 6 kept 577 deg.C, eutectic Al Si, or more, thereof more increased upper part than lower part, when region transfers downward while forming re-crystallized 9. Consequently, it reaches further to transverse direction.