Influence of chemical solution growth and vacuum annealing on the properties of (100) pseudocubic oriented BiFeO3 thin films
作者： Subhajit Nandy , C. Sudakar
DOI: 10.1063/1.5110588
关键词:
摘要: BiFeO3 (BFO), a Pb-free perovskite oxide, is being explored for its potential use in multitude of applications. We report on the oriented growth BFO thin films using facile metal-organic chemical solution deposition. Unlike characteristics observed Si/SiO2 and glass/FTO substrates, process sapphire (0001) found to yield highly along (100)pc planes. Furthermore, annealing air (BFO-A) high-vacuum (BFO-V) ambients are done explore tunable limits physical properties. Temperature-dependent Raman studies highlight high quality with sharp changes modes around transition temperatures. In addition, exhibit hitherto unreported anomalous shift A1(TO) E(TO) 450 K. The bandgap BFO-V (Eg = 2 eV) lower than that BFO-A (Eg = 2.12 eV) exhibits an increased defect photoluminescence emission. magnetization (M) twofold higher [M ≈ 42 (67) emu/cm3 at 300 K (5 K)]. In-plane out-of-plane M vs H plots show larger anisotropy hard hysteresis compared BFO-V. Piezoelectric switching d33 values 5–10 pm/V characteristic ferroelectric materials. Photoconductivity measurements one order increase due vacuum annealing. Carrier generation recombination lifetimes faster as films. controllable properties will be useful magnetoelectrics photoferroelectrics
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