Failure modes and FEM analysis of power electronic packaging

摘要: The development of power electronics technology is driven by the insatiate demand to control electrical power. new devices reduce volume converters three four orders magnitude compared their mercury arc predecessor. And turn-on and turn-off time has decreased from milliseconds microseconds even nanoseconds, depending on level. range commanded now extends micro-VA several hundreds mega-MVA. Among devices, insulated gate bipolar transistor (IGBT) are being more accepted increasingly used in traction application such as locomotive, elevator, tram subway. Thus long-term reliability IGBT highly demanded. In this paper failure modes especially IGBTs reviewed. A FEM analysis a multilayered packaging module under cyclic thermal loading presented.