作者: Hironori Banba
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摘要: A negative voltage detection circuit has a level of which is independent from the threshold MOS transistor incorporated into memory device. The detects whether or not output charge pump desired level, and then signal in accordance with result. by comparing multiple -(1/n) (n natural number) positive inner reference V ref . When are equal to each other, determines that level. lower than stopped. Otherwise, control operate so as at feed back control.