Nanostructured porous silicon for gas sensor applications
作者： G. Di Francia , M. Della Noce , V. La Ferrara , L. Lancellotti , P. Morvillo
DOI: 10.1179/026708302225003848
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摘要: Abstract The response of two different types nanostructured gas sensor to oxygen has been investigated. first (optical) is based on the photoluminescence quenching effect a porous silicon sample, second changes electrical conductance v. environment free standing membrane an insulating neutral substrate. both devices have measured and compared. optical exhibits following Stern-Volmer model. corresponding reactivity rate constant found depend characteristic nanodimension wire. electrically operated more sensitive shows opposite behavior if exposed reducing environment.
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