作者: Robert R. Robison , Anthony I. Chou , Joseph M. Lukaitis , Sungjae Lee
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摘要: Methods and structures for capacitively isolating a heat shield from handle wafer of silicon-on-insulator substrate. A contact plug is located in trench extending through isolation region device layer the substrate at least partially buried insulator The an interconnect structure, which also includes wire coupling with plug. An structure positioned between portion wafer. provides capacitive isolation.