Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$ m

摘要: This paper summarizes recent advances on InAs/InP quantum dash (QD) materials for lasers and amplifiers, QD device performance with particular interest in optical communication. We investigate both dashes a barrier well (DWELL) heterostructures operating at 1.5 mum. These two types of QDs can provide high gain low losses. Continuous-wave (CW) room-temperature lasing operation ground state cavity length as short 200 mum has been achieved, demonstrating the modal active core. A threshold current density 110 A/cm2 per layer obtained infinite-length DWELL laser. An optimized structure allows achieving T0 larger than 100 K broad-area (BA) lasers, 80 single-transverse-mode temperature range between 25degC 85degC. Buried ridge stripe (BRS)-type single-mode distributed feedback (DFB) are also demonstrated first time, exhibiting side-mode suppression ratio (SMSR) 45 dB. Such DFB allow floor-free 10-Gb/s direct modulation back-to-back transmission over 16-km standard fiber. In addition, novel results given gain, noise, four-wave mixing QD-based semiconductor amplifiers. Furthermore, we demonstrate that Fabry-Perot (FP) owing to small confinement factor three-dimensional (3-D) quantification electronic energy levels, exhibit beating linewidth narrow 15 kHz. an extremely linewidth, compared their QW or bulk counterparts, leads excellent phase noise time-jitter characteristics when actively mode-locked. constitute new step toward application amplifiers field fiber communications