Method of forming a floating gate in a flash memory device
作者： Hyeon Sang Shin
DOI:
关键词:
摘要: Disclosed is a method of forming the floating gate in flash memory device. After first polysilicon film deposited on semiconductor substrate, trench formed with pad nitride not deposited. The HDP oxide then to bury trench. Next, etched define portion where second will be advance. entire top surface, thus gate. Thus, it possible completely remove moat and an affect EFH (effective field height), solve wafer stress by simplified process film, effectively improve coupling ratio
lens.org 参考文章(20)
Kai-Cheng Chou, Hsingya Wang, Peter Rabkin, Non-volatile memory cell with non-uniform surface floating gate and control gate ,(2001)
Tai-su Park, Yu-gyun Shin, Han-sin Lee, Method for forming a trench isolation structure in an integrated circuit ,(1998)
Peter Rabkin, Kai-Cheng Chou, Hsingya Arthur Wang, Non-volatile memory cells with selectively formed floating gate ,(2001)
Gurtej S. Sandhu, Sukesh Sandhu, High coupling split-gate transistor and method for its formation ,(1999)
Won Sic Woo, Method for manufacturing semiconductor device and the device thereof ,(2002)
Randhir P. S. Thakur, Methods to form electronic devices ,(1998)
James H. Waldo, Roger Riggs, Ann M. Wollrath, System and method for facilitating dynamic loading of “stub” information to enable a program operating in one address space to invoke processing of a remote method or procedure in another address space ,(1998)
Noh Yeal Kwak, Cha Deok Dong, Method of manufacturing a flash memory cell ,(2002)
Chung Hon Lam, Merged self-aligned source and ONO capacitor for split gate non-volatile memory ,(2002)